Abstract: Medium-voltage SiC MOSFETs (> 3.3 kV) feature high breakdown voltage and fast switching speed. During the turn-on transient of 10 kV SiC MOSFETs, drain-source voltage drops from 6000 V ...
Abstract: To address the needs of new power systems with large-scale integration of renewable energy sources, this paper independently developed a high-voltage silicon carbide (SiC) ...
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