Abstract: Two compact WR-1.5 (500–750 GHz) low-noise amplifier (LNA) circuits have been developed, based on miniaturized thin-film microstrip lines (TFMSL) utilizing a 35 nm InGaAs-on-GaAs and a more ...
Abstract: SiC die attach bonding based on a micronsized Ag sinter paste direct on DBA (direct-bonded aluminum) substrate was developed, which achieve a high shear strength about 35 MPa at a low ...
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